^e.mi-conclu.cto'i zpioducti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2N3390 2n3391 2n3391a 2n3392 2n3393 to-92 npn general purpose amplifier this device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 ma. sourced from process 10. f absolute maximum ratings* ta = 25c unless otherwise noted symbol vceo vcbo vebo k tj, tsta parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous operating and storage junction temperature range value 25 25 5.0 500 -55 to +150 units v v v ma o these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. ta = 25c unless otherwise noted symbol pd rejc rwa characteristic total device dissipation derate above 25c thermal resistance, junction to case thermal resistance, junction to ambient max 2N3390 / 3391/a / 3392 / 3393 625 5.0 83.3 200 units mw mw/c c/w c/w nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders.
electrical characteristics ta=25c unless otherwise no symbol parameter test conditions min max units off characteristics v(br)ceo v(br)cbo v(br)ebo icbo iebo collector-emitter breakdown voltage* collector-base breakdown voltage emitter-base breakdown voltage collector-cutoff current emitter-cutoff current lc = 10ma, ib = 0 lc = 10na, ie = 0 !e = 10na, lc = 0 vcb=18v, ie = 0 veb = 5.0 v, ic = 0 25 25 5.0 100 100 v v v na na on characteristics* hfe dc current gain vce = 4.5 v, ic = 2.0 ma 2N3390 2n3391/a 2n3392 2n3393 400 250 150 90 800 500 300 180 small signal characteristics cob hfe nf output capacitance small-signal current gain noise figure vcb = 10v, f = 1.0mhz ic = 2.0 ma, vce = 4.5 v, f = 1 .0 khz 2N3390 2n3391/a 2n3392 2n3393 vce = 4.5v, lc=100na, rg= 500jj, 2n3391aonly bw = 15.7 khz 2.0 400 250 150 90 10 1250 800 500 400 5.0 pf db pulse test: pulse width 300 jis. duty cycle s 2.0%
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